Growth of strained III-V semiconductors by molecular beam epitaxy
| dc.contributor.author | Ekenstedt, Michael, 1963- | en |
| dc.date.accessioned | 2008-08-11T09:15:15Z | |
| dc.date.available | 2008-08-11T09:15:15Z | |
| dc.date.issued | 1993 | en |
| dc.identifier.isbn | 91-628-1083-9 | en |
| dc.identifier.uri | http://hdl.handle.net/2077/10730 | |
| dc.title | Growth of strained III-V semiconductors by molecular beam epitaxy | en |
| dc.type | Text | en |
| dc.type.svep | Doctoral thesis | en |
| dc.gup.origin | Göteborgs universitet/University of Gothenburg | eng |
| dc.gup.department | Fysik | en |
| dc.gup.dissdbid | 1061 | en |
| dc.gup.dissdb-impressum | Göteborg 1993 | en |
| dc.gup.dissdb-fakultet | MNF |
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