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The electrical activity of defects created in silicon single crystals during ion implantation

dc.contributor.authorAndersson, Åke, 1941-en
dc.date.accessioned2008-08-11T09:42:17Z
dc.date.available2008-08-11T09:42:17Z
dc.date.issued1973en
dc.identifier.urihttp://hdl.handle.net/2077/11647
dc.subjectFysik Elektricitet Magnetismen
dc.titleThe electrical activity of defects created in silicon single crystals during ion implantationen
dc.typeTexten
dc.type.svepDoctoral thesisen
dc.gup.originGöteborgs universitet/University of Gothenburgeng
dc.gup.dissdbid189en
dc.gup.dissdb-impressumGöteborg 1973en
dc.gup.dissdb-fakultet(saknas)


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