The electrical activity of defects created in silicon single crystals during ion implantation
| dc.contributor.author | Andersson, Åke, 1941- | en |
| dc.date.accessioned | 2008-08-11T09:42:17Z | |
| dc.date.available | 2008-08-11T09:42:17Z | |
| dc.date.issued | 1973 | en |
| dc.identifier.uri | http://hdl.handle.net/2077/11647 | |
| dc.subject | Fysik Elektricitet Magnetism | en |
| dc.title | The electrical activity of defects created in silicon single crystals during ion implantation | en |
| dc.type | Text | en |
| dc.type.svep | Doctoral thesis | en |
| dc.gup.origin | Göteborgs universitet/University of Gothenburg | eng |
| dc.gup.dissdbid | 189 | en |
| dc.gup.dissdb-impressum | Göteborg 1973 | en |
| dc.gup.dissdb-fakultet | (saknas) |
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