MBE-growth and Photoemission Investigations of Ga, InAs on GaAs.
| dc.contributor.author | Zhongquing, He | en |
| dc.date.accessioned | 2008-08-11T10:10:58Z | |
| dc.date.available | 2008-08-11T10:10:58Z | |
| dc.date.issued | 1996 | en |
| dc.identifier.uri | http://hdl.handle.net/2077/15080 | |
| dc.title | MBE-growth and Photoemission Investigations of Ga, InAs on GaAs. | en |
| dc.type | Text | en |
| dc.type.svep | Doctoral thesis | en |
| dc.gup.origin | Göteborgs universitet/University of Gothenburg | eng |
| dc.gup.dissdbid | 4989 | en |
| dc.gup.dissdb-impressum | 1996. Sammanläggningsavhandling. Department of Physics, Chalmers University of Technology and Göteborg University. | en |
| dc.gup.dissdb-fakultet | (saknas) |
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