dc.contributor.author | Gurusinghe, Manjula 1965- | en |
dc.date.accessioned | 2008-08-11T10:26:43Z | |
dc.date.available | 2008-08-11T10:26:43Z | |
dc.date.issued | 2005 | en |
dc.identifier.isbn | 91-628-6332-0 | en |
dc.identifier.uri | http://hdl.handle.net/2077/16507 | |
dc.subject | GaN | en |
dc.subject | A1GaN/GaN | en |
dc.subject | A1GaAs/GaAs | en |
dc.subject | mobility | en |
dc.subject | scattering | en |
dc.subject | dislocation density | en |
dc.subject | electron concentration | en |
dc.subject | qantum well | en |
dc.subject | heterostructure | en |
dc.subject | esonance current | en |
dc.subject | non-resonance current | en |
dc.title | Electron Transport Limitations in Two and Three Dimensions - a study on arsenide and nitride semiconductors and heterostructures | en |
dc.type | Text | en |
dc.type.svep | Doctoral thesis | en |
dc.gup.origin | Göteborgs universitet/University of Gothenburg | eng |
dc.gup.department | Physics and Engineering Physics | eng |
dc.gup.department | Fysik och teknisk fysik | swe |
dc.gup.defenceplace | Kollektorn (room No. A423) at the Department of Microtechnology and Nanoscience (MC2), Kemivägen 9, kl 10.00 | en |
dc.gup.defencedate | 2005-05-13 | en |
dc.gup.dissdbid | 6460 | en |
dc.gup.dissdb-fakultet | MNF | |