Electron Transport Limitations in Two and Three Dimensions - a study on arsenide and nitride semiconductors and heterostructures

dc.contributor.author	Gurusinghe, Manjula 1965-	en
dc.date.accessioned	2008-08-11T10:26:43Z
dc.date.available	2008-08-11T10:26:43Z
dc.date.issued	2005	en
dc.identifier.isbn	91-628-6332-0	en
dc.identifier.uri	http://hdl.handle.net/2077/16507
dc.subject	GaN	en
dc.subject	A1GaN/GaN	en
dc.subject	A1GaAs/GaAs	en
dc.subject	mobility	en
dc.subject	scattering	en
dc.subject	dislocation density	en
dc.subject	electron concentration	en
dc.subject	qantum well	en
dc.subject	heterostructure	en
dc.subject	esonance current	en
dc.subject	non-resonance current	en
dc.title	Electron Transport Limitations in Two and Three Dimensions - a study on arsenide and nitride semiconductors and heterostructures	en
dc.type	Text	en
dc.type.svep	Doctoral thesis	en
dc.gup.origin	Göteborgs universitet/University of Gothenburg	eng
dc.gup.department	Physics and Engineering Physics	eng
dc.gup.department	Fysik och teknisk fysik	swe
dc.gup.defenceplace	Kollektorn (room No. A423) at the Department of Microtechnology and Nanoscience (MC2), Kemivägen 9, kl 10.00	en
dc.gup.defencedate	2005-05-13	en
dc.gup.dissdbid	6460	en
dc.gup.dissdb-fakultet	MNF