Electron Transport Limitations in Two and Three Dimensions - a study on arsenide and nitride semiconductors and heterostructures
University
Göteborgs universitet/University of Gothenburg
Institution
Physics and Engineering Physics
Fysik och teknisk fysik
Disputation
Kollektorn (room No. A423) at the Department of Microtechnology and Nanoscience (MC2), Kemivägen 9, kl 10.00
Date of defence
2005-05-13
View/
Date
2005Author
Gurusinghe, Manjula 1965-
Keywords
GaN
A1GaN/GaN
A1GaAs/GaAs
mobility
scattering
dislocation density
electron concentration
qantum well
heterostructure
esonance current
non-resonance current
Publication type
Doctoral thesis
ISBN
91-628-6332-0